Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dv/dt Rating ? Repetitive Avalanche Rated ? Current Sense ? Fast Switching ? Ease

文件：223.63 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)

Infineon

英飛凌

MOSFET N-CH 400V 5.5A TO-220-5

Vishay

威世

N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

Description The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. General features

文件：94.17 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRF730 is supplied in

文件：59.69 Kbytes 頁數(shù)：7 Pages

PHI

PHI

N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體