首頁 >HSBA15810C>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HSBA15810C | MOSFET | HUASHUO 華朔半導體 | HUASHUO | |
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET? F7 Power MOSFET in a TO-220 package Features ? 100 avalanche tested ? Ultra low on-resistance Applications ? Switching applications Description This N-channel Power MOSFETs utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c 文件:357.98 Kbytes 頁數(shù):13 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.9mΩ(Max)@ VGS= 10V DESCRIPTION · Switching Applications 文件:327.26 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET? F7 Power MOSFET in a TO-220 package Features ? 100 avalanche tested ? Ultra low on-resistance Applications ? Switching applications Description This N-channel Power MOSFETs utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c 文件:357.98 Kbytes 頁數(shù):13 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS |
技術參數(shù)
- Type:
Single-N
- Process:
SGT
- Package:
PRPAK5x6
- VDS( V ):
100
- VGS( V ):
±20
- ID( A ):
100
- VGS(TH)( V ):
4
- RDS(mΩ)@VGS(10V Max):
4.5
- RDS(mΩ)@VGS(4.5V Max):
--------
- Qg( nC ):
72
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HUASHUO(華朔) |
2447 |
PRPAK5x6 |
105000 |
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
NK/南科功率 |
2025+ |
PRPAK5x6 |
986966 |
國產(chǎn) |
詢價 |
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