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    首頁 >HSBA15810C>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    HSBA15810C

    MOSFET

    HUASHUO

    華朔半導體

    ST15810

    N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET? F7 Power MOSFET in a TO-220 package

    Features ? 100 avalanche tested ? Ultra low on-resistance Applications ? Switching applications Description This N-channel Power MOSFETs utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

    文件:357.98 Kbytes 頁數(shù):13 Pages

    STMICROELECTRONICS

    意法半導體

    STB15810

    isc N-Channel MOSFET Transistor

    FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.9mΩ(Max)@ VGS= 10V DESCRIPTION · Switching Applications

    文件:327.26 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    STP15810

    N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET? F7 Power MOSFET in a TO-220 package

    Features ? 100 avalanche tested ? Ultra low on-resistance Applications ? Switching applications Description This N-channel Power MOSFETs utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

    文件:357.98 Kbytes 頁數(shù):13 Pages

    STMICROELECTRONICS

    意法半導體

    技術參數(shù)

    • Type:

      Single-N

    • Process:

      SGT

    • Package:

      PRPAK5x6

    • VDS( V ):

      100

    • VGS( V ):

      ±20

    • ID( A ):

      100

    • VGS(TH)( V ):

      4

    • RDS(mΩ)@VGS(10V Max):

      4.5

    • RDS(mΩ)@VGS(4.5V Max):

      --------

    • Qg( nC ):

      72

    供應商型號品牌批號封裝庫存備注價格
    HUASHUO(華朔)
    2447
    PRPAK5x6
    105000
    3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
    詢價
    24+
    N/A
    56000
    一級代理-主營優(yōu)勢-實惠價格-不悔選擇
    詢價
    NK/南科功率
    2025+
    PRPAK5x6
    986966
    國產(chǎn)
    詢價
    更多HSBA15810C供應商 更新時間2026-1-22 15:01:00

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