N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET? F7 Power MOSFET in a TO-220 package

Features ? 100 avalanche tested ? Ultra low on-resistance Applications ? Switching applications Description This N-channel Power MOSFETs utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

文件：357.98 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.9mΩ(Max)@ VGS= 10V DESCRIPTION · Switching Applications

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ISC

無錫固電

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET? F7 Power MOSFET in a TO-220 package

Features ? 100 avalanche tested ? Ultra low on-resistance Applications ? Switching applications Description This N-channel Power MOSFETs utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

文件：357.98 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

T1/CEPT/ISDN PRI INTERFACE TRANSFORMER

文件：26.05 Kbytes 頁數(shù)：1 Pages

RHOMBUS-IND