isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.9mΩ(Max)@ VGS= 10V DESCRIPTION · Switching Applications

文件：327.26 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET? F7 Power MOSFET in a TO-220 package

Features ? 100 avalanche tested ? Ultra low on-resistance Applications ? Switching applications Description This N-channel Power MOSFETs utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

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STMICROELECTRONICS

意法半導(dǎo)體

T1/CEPT/ISDN PRI INTERFACE TRANSFORMER

文件：26.05 Kbytes 頁數(shù)：1 Pages

RHOMBUS-IND

N-Ch 100V Fast Switching MOSFETs

Features ? Advanced Trench MOS Technology ? 100 EAS Guaranteed ? Super Low RDS(ON) ? Green Device Available Applications ? MOTOR Driver. ? BMS. ? High frequency switching and synchronous rectification.

文件：487.7 Kbytes 頁數(shù)：4 Pages

FETEK

臺灣東沅

N-Ch 100V Fast Switching MOSFETs

Features? Advanced Trench MOS Technology ? 100 EAS Guaranteed ? Super Low RDS(ON) ? Green Device Available Applications ? MOTOR Driver. ? BMS. ? High frequency switching and synchronous rectification.

文件：447.8 Kbytes 頁數(shù)：4 Pages

FETEK

臺灣東沅

N-Ch 100V Fast Switching MOSFETs

Features? Advanced Trench MOS Technology ? 100 EAS Guaranteed ? Super Low RDS(ON) ? Green Device Available Applications ? MOTOR Driver. ? BMS. ? High frequency switching and synchronous rectification.

文件：478.91 Kbytes 頁數(shù)：4 Pages

FETEK

臺灣東沅