| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon N Channel Power MOSFET Power Switching Descriptions This FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power 文件：134.23 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel Power MOSFET Power Switching Descriptions This FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power 文件：134.23 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：92.07 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：92.07 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：92.07 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：92.07 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：92.07 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：92.07 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：92.07 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel Power MOSFET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying 文件：116.62 Kbytes 頁數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- 輸入電壓：
80-430
- 輸出功率：
1000W
- 功率范圍：
300W-1KW
- 輸出路數(shù)：
1
- 尺寸（mm）：
117.0*61.2*17.5
- 輸出范圍：
9-18V
- 安全符合：
符合
- 散熱方式：
集成散熱
- 輸出電壓1：
14VdcV/71.5;A
- 輸出電壓2：
V/A
- 輸出電壓3：
V/A
- 輸出電壓4：
V/A
- 輸出電壓5：
V/A
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PHI |
05+ |
原廠原裝 |
5016 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
N/A |
25+ |
QFP |
3000 |
強調(diào)現(xiàn)貨,隨時查詢! |
詢價 | ||
HAF |
25+ |
CDIP |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
RENESAS |
24+ |
TO252 |
1068 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
HIT |
23+ |
TO263 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
Honeywell |
24+ |
原廠原裝 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價 | ||
HITACHI |
24+ |
TO252 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
RENESAS |
7 |
2600 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | |||
12+ |
TO-263 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 | |||
RENESAS |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價 |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
