| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over 文件:97.05 Kbytes 頁(yè)數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe 文件:35.21 Kbytes 頁(yè)數(shù):5 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over 文件:97.05 Kbytes 頁(yè)數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over 文件:97.05 Kbytes 頁(yè)數(shù):9 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe 文件:35.21 Kbytes 頁(yè)數(shù):5 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件:115.88 Kbytes 頁(yè)數(shù):10 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件:115.88 Kbytes 頁(yè)數(shù):10 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件:115.88 Kbytes 頁(yè)數(shù):10 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件:114.96 Kbytes 頁(yè)數(shù):11 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件:114.96 Kbytes 頁(yè)數(shù):11 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- 輸入電壓:
80-430
- 輸出功率:
1000W
- 功率范圍:
300W-1KW
- 輸出路數(shù):
1
- 尺寸(mm):
117.0*61.2*17.5
- 輸出范圍:
9-18V
- 安全符合:
符合
- 散熱方式:
集成散熱
- 輸出電壓1:
14VdcV/71.5;A
- 輸出電壓2:
V/A
- 輸出電壓3:
V/A
- 輸出電壓4:
V/A
- 輸出電壓5:
V/A
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
PHI |
05+ |
原廠原裝 |
5016 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
N/A |
25+ |
QFP |
3000 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢! |
詢價(jià) | ||
HAF |
25+ |
CDIP |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
RENESAS |
24+ |
TO252 |
1068 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
HIT |
23+ |
TO263 |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
Honeywell |
24+ |
原廠原裝 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價(jià) | ||
HITACHI |
24+ |
TO252 |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
RENESAS |
7 |
2600 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | |||
12+ |
TO-263 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | |||
RENESAS |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
相關(guān)規(guī)格書
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相關(guān)庫(kù)存
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- SI7946DP
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- SI7905DN
- SI7938DP
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- SI7948DP
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- SE1
- PI7C8150B
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- TL074
- TL074

