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首頁 >HAF>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
HAF1008S	文件：114.96 Kbytes Page：11 Pages	Silicon P Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件：114.96 Kbytes 頁數(shù)：11 Pages	RENESAS 瑞薩	RENESAS
HAF1009	文件：113.11 Kbytes Page：10 Pages	Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：113.11 Kbytes 頁數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
HAF1009L	文件：113.11 Kbytes Page：10 Pages	Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：113.11 Kbytes 頁數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
HAF1009S	文件：113.11 Kbytes Page：10 Pages	Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over 文件：113.11 Kbytes 頁數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
HAF-10L	文件：1.32924 Mbytes Page：5 Pages	1008 to 1512W Power Factor Correction Module Features ? Suitable For Developing Custom Supplies ? Up to 96.5 Efficient ? Compact Full Brick Package (116.8 x 61 x 12.7mm) ? Up to 100°C Rated Baseplate Temperature ? Conduction Cooled Via Baseplate Benefits ? Module Solution Reduces Risk, Time and Cost ? Less Waste Heat to Manage and 文件：1.32924 Mbytes 頁數(shù)：5 Pages	TDK 東電化	TDK
HAF-15L	文件：1.32924 Mbytes Page：5 Pages	1008 to 1512W Power Factor Correction Module Features ? Suitable For Developing Custom Supplies ? Up to 96.5 Efficient ? Compact Full Brick Package (116.8 x 61 x 12.7mm) ? Up to 100°C Rated Baseplate Temperature ? Conduction Cooled Via Baseplate Benefits ? Module Solution Reduces Risk, Time and Cost ? Less Waste Heat to Manage and 文件：1.32924 Mbytes 頁數(shù)：5 Pages	TDK 東電化	TDK
HAF-15T	文件：1.32924 Mbytes Page：5 Pages	1008 to 1512W Power Factor Correction Module Features ? Suitable For Developing Custom Supplies ? Up to 96.5 Efficient ? Compact Full Brick Package (116.8 x 61 x 12.7mm) ? Up to 100°C Rated Baseplate Temperature ? Conduction Cooled Via Baseplate Benefits ? Module Solution Reduces Risk, Time and Cost ? Less Waste Heat to Manage and 文件：1.32924 Mbytes 頁數(shù)：5 Pages	TDK 東電化	TDK
HAF2001	文件：54.85 Kbytes Page：10 Pages	Silicon N Channel MOS FET Series Power Switching Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over pow 文件：54.85 Kbytes 頁數(shù)：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HAF2001	文件：92.92 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件：92.92 Kbytes 頁數(shù)：9 Pages	RENESAS 瑞薩	RENESAS
HAF2001-90	文件：92.92 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件：92.92 Kbytes 頁數(shù)：9 Pages	RENESAS 瑞薩	RENESAS

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技術(shù)參數(shù)

輸入電壓：
80-430
輸出功率：
1000W
功率范圍：
300W-1KW
輸出路數(shù)：
1
尺寸（mm）：
117.0*61.2*17.5
輸出范圍：
9-18V
安全符合：
符合
散熱方式：
集成散熱
輸出電壓1：
14VdcV/71.5;A
輸出電壓2：
V/A
輸出電壓3：
V/A
輸出電壓4：
V/A
輸出電壓5：
V/A

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
芯有半導(dǎo)體（深圳）有限公司	HAF4017BT	PHI	05+	原廠原裝	5016	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市福安甌科技有限公司	HAF3841CN96	N/A	25+	QFP	3000	強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	HAF011203	HAF	25+	CDIP	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
深圳市弘為電子有限公司	HAF2007-91STL	RENESAS	24+	TO252	1068	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	HAF1002	HIT	23+	TO263	7000	絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購!	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	HAFBSF0200C2AX3	Honeywell	24+	原廠原裝	6000	進(jìn)口原裝正品假一賠十,貨期7-10天	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	HAF2007	HITACHI	24+	TO252	6980	原裝現(xiàn)貨,可開13%稅票	詢價(jià)
深圳市益百分電子有限公司	HAF2025-91STL-E	RENESAS	7		2600	全新原裝進(jìn)口自己庫存優(yōu)勢	詢價(jià)
深圳市勤思達(dá)科技有限公司	HAF2012		12+	TO-263	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	HAF2026RJ-EL-E	RENESAS	23+	SOP8	5000	原裝正品,假一罰十	詢價(jià)

更多HAF供應(yīng)商更新時(shí)間2026-1-21 16:07:00

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