絲?。?strong>GAN；Package：SOT-23-5；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features · Wide Operating Voltage: 2.5V to 6V · Low Dropout Voltage:170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V · High Output Voltage Accuracy: ±2 · High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz · Low Standby Current: 0.1μA · Low Quiescent Current: 60μA Typical · Low Output

文件：861.57 Kbytes 頁數(shù)：21 Pages

DIODES

美臺半導體

絲印：GAN；Package：20Ld3.2x1.8??TQFN；PWM DC/DC Controller With VID Inputs For Portable GPU Core-Voltage Regulator

文件：1.25671 Mbytes 頁數(shù)：25 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/gan041/marking.html">GAN041；Package：SOT429；650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

1. General description The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

文件：315.84 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲印：GAN063-650WSA；Package：SOT429；650 V, 50 mΩ Gallium Nitride (GaN) FET

1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefit

文件：287.03 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/gan111/marking.html">GAN111；Package：TO-247-3L；650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package

1. General description The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

文件：396.1 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/gan041/marking.html">GAN041；Package：SOT429；650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

1. General description The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

文件：315.84 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲印：GAN063-650WSA；Package：SOT429；650 V, 50 mΩ Gallium Nitride (GaN) FET

1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefit

文件：287.03 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/gan111/marking.html">GAN111；Package：TO-247-3L；650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package

1. General description The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

文件：396.1 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲印：039INBBX；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performanc

文件：301.95 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/039inbb/marking.html">039INBB；Package：CCPAK1212；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performanc

文件：526.52 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世