絲印：GAP；Package：SOT-23-5；300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features · Wide Operating Voltage: 2.5V to 6V · Low Dropout Voltage:170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V · High Output Voltage Accuracy: ±2 · High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz · Low Standby Current: 0.1μA · Low Quiescent Current: 60μA Typical · Low Output

文件：861.57 Kbytes 頁數(shù)：21 Pages

DIODES

美臺半導體

絲?。?strong>GAP；Package：16Ld2.6x1.8??TQFN；PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator

文件：919.68 Kbytes 頁數(shù)：17 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/gapa/marking.html">GAPA；Package：SOT-23；Precision, Low Noise FGA? Voltage References with Disable

Features ? Reference output voltage . . . . . . . . . . . . . . . .2.048V, 2.500V, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.000V, 3.300V, 4.096V ? Initial accuracy . . . . . . . . . . . . . . . . . . . . . . . . ±1.0mV, ±2.5mV ? Input voltage range - ISL21060-20 . . . .

文件：3.01874 Mbytes 頁數(shù)：21 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/gap2gs/marking.html">GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Features ? High voltage rail up to 1200 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN

文件：551.02 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

絲印：GAP2GS；Package：SO-8；Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs

Features ? High voltage rail up to 1200 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN

文件：551.02 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/gap2gsn/marking.html">GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features ? High voltage rail up to 1700 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN

文件：556.07 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/gap2gsn/marking.html">GAP2GSN；Package：SO-8；Isolated 3 A single gate driver for Enhancement mode GaN FETs

Features ? High voltage rail up to 1700 V ? Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V ? dV/dt transient immunity ±100 V/ns ? Input-output propagation delay: 45 ns ? Separate sink and source option for easy gate driving configuration ? UVLO function optimized for GaN

文件：556.07 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

絲印：GAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver

Features ? High voltage rail up to 1200 V ? Driver current capability: 4 A sink/source @ 25 °C ? dV/dt transient immunity ±100 V/ns ? Overall input-output propagation delay: 75 ns ? Separate sink and source option for easy gate driving configuration ? 4 A Miller CLAMP ? UVLO function ? Con

文件：803.17 Kbytes 頁數(shù)：24 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/gap2hdm/marking.html">GAP2HDM；Package：SO-36W；Galvanically isolated 4 A dual gate driver

Features ? High voltage rail up to 1200 V ? Driver current capability: 4 A sink/source @ 25 °C ? dV/dt transient immunity ±100 V/ns ? Overall input-output propagation delay: 75 ns ? Separate sink and source option for easy gate driving configuration ? 4 A Miller CLAMP ? UVLO function ? Con

文件：803.17 Kbytes 頁數(shù)：24 Pages

STMICROELECTRONICS

意法半導體

Dual Wavelength SMD Type Emitter

Features ? Top view 1615 package ? Viewing Angle = 65 ? Compatible with infrared and vapor phase reflow solder process ? High reliability ? Dual dominant wavelength (G=520nm , A=605nm) ? RoHS compliance Applications ? Optical indicator. ? Switch and Symbol Display. Description The

文件：1.15654 Mbytes 頁數(shù)：10 Pages

CTMICRO