絲印：G18；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1591, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOSFET has excellent switching characteristics and high drain to source voltage, it is suitable

文件：771.02 Kbytes 頁(yè)數(shù)：7 Pages

RENESAS

瑞薩

絲?。?strong>G18；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁(yè)數(shù)：3 Pages

LUGUANG

魯光電子

絲?。?a target="_blank" title="Marking" href="/g180c06/marking.html">G180C06；Package：TO-252-4DUAL；N and P Channel Enhancement Mode Power MOSFET

Description The G180C06Y uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.39349 Mbytes 頁(yè)數(shù)：10 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G180N06；Package：SOP-8DUAL；Dual N-Channel Enhancement Mode Power MOSFET

Description The G180N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：924.25 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g180p06/marking.html">G180P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G180P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：631.92 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g18n20/marking.html">G18N20；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G18N20K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：886.44 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g18n20/marking.html">G18N20；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G18N20T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：913.6 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G18N50；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. Application l Switch Mode Power Supply (SMPS) l

文件：1.01043 Mbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g18np06/marking.html">G18NP06；Package：TO-252-4Dual；N and P Channel Enhancement Mode Power MOSFET

Description The G18NP06Y uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.37711 Mbytes 頁(yè)數(shù)：10 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g18p03/marking.html">G18P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G18P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：644.41 Kbytes 頁(yè)數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體