絲?。?strong>G13；Package：SC-70；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and hea

文件：327.47 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

絲?。?strong>G13；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲印：G130N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G130N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：969.35 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g130n06/marking.html">G130N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G130N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06846 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g130n06d/marking.html">G130N06D；Package：SOP-8Dual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G130N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.5 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G135P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G135P04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：966.83 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g135p04/marking.html">G135P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G135P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：912.34 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g13p04/marking.html">G13P04；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G13P04S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03799 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g13f/marking.html">G13F；Package：SOT89-5；600mA CMOS LDO REGULATOR WITH ENABLE

文件：743.27 Kbytes 頁數(shù)：18 Pages

DIODES

美臺半導(dǎo)體

絲印：G13E；Package：SOT89-5；600mA CMOS LDO REGULATOR WITH ENABLE

文件：743.27 Kbytes 頁數(shù)：18 Pages

DIODES

美臺半導(dǎo)體