| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>G100；Package：DO-214AC；Zener Diodes 文件：1.54174 Mbytes 頁(yè)數(shù)：3 Pages | LUGUANG 魯光電子 | LUGUANG | ||
絲?。?strong>G100；Package：Micro8；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad 文件：873.15 Kbytes 頁(yè)數(shù)：16 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?strong>G100；Package：Micro8；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad 文件：873.15 Kbytes 頁(yè)數(shù)：16 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/g1002/marking.html">G1002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET Description The G1002 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：901.43 Kbytes 頁(yè)數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g1002/marking.html">G1002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET Description The G1002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：1.11734 Mbytes 頁(yè)數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g1002l/marking.html">G1002L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET Description The G1002L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：888.83 Kbytes 頁(yè)數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲印：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：891.59 Kbytes 頁(yè)數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g1003a/marking.html">G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta 文件：745.97 Kbytes 頁(yè)數(shù)：6 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲?。?a target="_blank" title="Marking" href="/g1003b/marking.html">G1003B；Package：SOT-23-3；N-Channel Enhancement Mode Power MOSFET Description The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：780.45 Kbytes 頁(yè)數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲印：G1005；Package：TO-92；PWM applications The G1005 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management 文件：2.53766 Mbytes 頁(yè)數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
24000 |
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu) |
詢價(jià) | |||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
onsemi/安森美 |
兩年內(nèi) |
NA |
10000 |
實(shí)單價(jià)格可談 |
詢價(jià) | ||
ON Semiconductor |
23+/22+ |
3000 |
原裝進(jìn)口訂貨7-10個(gè)工作日 |
詢價(jià) | |||
ON SEMICONDUCTOR |
20 |
詢價(jià) | |||||
ON SEMICONDUCTOR |
24+ |
con |
20 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格 |
詢價(jià) | ||
onsemi |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價(jià) | ||
ON Semiconductor |
2025 |
3000 |
全新、原裝 |
詢價(jià) | |||
onsemi |
25+ |
原廠封裝 |
9999 |
詢價(jià) | |||
onsemi |
25+ |
原廠封裝 |
10280 |
詢價(jià) |
相關(guān)芯片絲印
更多- G1002A
- G1002L
- PJM10H02NSA
- G1003B
- G1006LE
- G1008B
- IGW100N60H3
- G100N03D5
- G100N03
- G100P04KA
- G100P04KH
- STGB10M65DF2
- G10N03S
- G10N10A
- G10N65F
- G10P03
- DTB113ZK
- FMG11A
- DTB113ZK
- DTB113ZK
- DTB113ZCHZG
- BZG03C11
- G11S
- MSPM0G1107TDGS28R
- HYG110N03LR1S
- G110N06KA
- G110N06TA
- G115P06M
- FMG12
- MIC2006-1.2YML-TR
- PESDSOT12C
- RQ3G120BJFRA
- STGYA120M65DF2AG
- G120N03D3
- G120P03S2
- G120P06T
- HYG120P06LR1U
- TPS3808EG125DBVR
- G12P03D3
- G12P06K
- G12P10K
- BZG03C13
- BZG03C130
- G130N06S
- G135P04K
相關(guān)庫(kù)存
更多- G1002
- G1003A
- G1003A
- G1005
- G1007
- G100C04D52
- IGQ100N120S7
- G100N03D5A
- G100N04T
- G100P04D5
- IGD10N65T6
- STGF10M65DF2
- G10N10AS
- SGB10N60A
- G10N80F
- IGP10N60T
- UMG11N
- EMG11
- DTB113ZK
- DTB113ZKFRA
- EMG11
- 2SK1133
- BZG03C110
- RQ3G110AT
- G110N06K
- G110N06T
- HYG110P04LQ1C2
- G115P06T
- BZG03C12
- 2SK1399
- BZG03C120
- RQ3G120BKFRA
- G120N02D32
- G120N03D32
- G120P06M
- HYG120P06LR1D
- HYG120P06LR1V
- G12N65F
- G12P04K
- G12P10TE
- G12P10KE
- 2SK1580
- G130N06M
- G130N06S2
- G135P04D3
