| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/g1003a/marking.html">G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta 文件：745.97 Kbytes 頁數(shù)：6 Pages | YFWDIODE 佑風微 | YFWDIODE | ||
絲印：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：891.59 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導體 | GOFORD | ||
High density cell design for ultra low Rdson Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDSS RDS(ON)@10V (typ) ID 100V 135mΩ 5A ● High densi 文件：2.73284 Mbytes 頁數(shù)：5 Pages | YFWDIODE 佑風微 | YFWDIODE | ||
絲印：G1003B；Package：SOT-23-3；N-Channel Enhancement Mode Power MOSFET Description The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：780.45 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g1005/marking.html">G1005；Package：TO-92；PWM applications The G1005 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management 文件：2.53766 Mbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導體 | GOFORD | ||
絲印：G1006；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：891.32 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g1007/marking.html">G1007；Package：SOP-8；Power switching application General Description The G1007 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application a nd LED b acklighting. Application ● Power switching application ● LED backlighting 文件：2.6052 Mbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導體 | GOFORD | ||
絲印：G1008B；Package：SOP-8DUAL；DUAL N-Channel Enhancement Mode Power MOSFET Description The G1008B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：661.96 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g100c04/marking.html">G100C04；Package：DFN5/6-8LDual；N and P Channel Enhancement Mode Power MOSFET Description The G100C04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.27131 Mbytes 頁數(shù)：10 Pages | GOFORD 谷峰半導體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g100n03/marking.html">G100N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The G100N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：766.81 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導體 | GOFORD |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+R
- 性質(zhì)：
表面帖裝型 （SMD）_差分放大器射極輸出 （Dual）
- 封裝形式：
貼片封裝
- 極限工作電壓：
50V
- 最大電流允許值：
0.1A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
5
- 可代換的型號：
FMG10A,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
H-21
- vtest：
50
- htest：
999900
- atest：
0.05
- wtest：
0
產(chǎn)品屬性
- 產(chǎn)品編號：
G10
- 制造商：
XP Power
- 類別：
電源 - 板安裝 > 直流轉(zhuǎn)換器
- 系列：
XP EMCO - G (1.5W)
- 包裝：
管件
- 類型：
高電壓 - 隔離模塊
- 電壓 - 輸入（最小值）：
0.7V
- 電壓 - 輸入（最大值）：
12V
- 電壓 - 輸出 1：
1000V
- 電流 - 輸出（最大值）：
1.5mA
- 應用：
ITE（商業(yè)）
- 特性：
比例輸出
- 工作溫度：
-10°C ~ 60°C
- 安裝類型：
通孔
- 封裝/外殼：
4-DIP 模塊
- 大小 / 尺寸：
1.50" 長 x 1.50" 寬 x 0.63" 高（38.1mm x 38.1mm
- 描述：
DC DC CONVERTER 1000V 1.5W
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
XP Power |
25+ |
全新-電源模塊 |
17769 |
DC-DC轉(zhuǎn)換器電源模塊G10交期短價格優(yōu)#即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
XP Power |
25+ |
N/A |
12000 |
一級代理保證進口原裝正品假一罰十價格合理 |
詢價 | ||
ADI/亞德諾 |
QFN |
6698 |
詢價 | ||||
NA |
2023+環(huán)保現(xiàn)貨 |
TSSOP8 |
10 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務 |
詢價 | ||
NA |
23+ |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
NULL |
04+/05+ |
SOT-23 |
202 |
全新原裝100真實現(xiàn)貨供應 |
詢價 | ||
GMT |
13+ |
TO-252 |
3549 |
原裝分銷 |
詢價 | ||
FSC |
2016+ |
TO-220 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
GMT |
23+ |
TO252 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
konica |
24+ |
QFP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 |
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