| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HelioProtection? HP15NH Photovoltaic fuse-links gPV 1500VDC FEATURES & BENEFITS ? Global acceptance ? Low fault current interrupting capability ? Temperature cycle withstand capability ? Durable construction for enhanced system longevity ? High efficiency with low power losses ? Available in 3 versions: plain blade, direct mounted, direct mounted wit 文件：2.62155 Mbytes 頁數(shù)：18 Pages | MERSEN 美爾森 | MERSEN | ||
ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS PRODUCT DESCRIPTION The G Series is a line of miniature, versatile component level building blocks that provide up to 6kV, positive or negative, in a compact PC mount package. The isolated output is directly proportional to the input, and is linear from approximately 0.7 volts in. Excellent flter 文件：716.83 Kbytes 頁數(shù)：10 Pages | XPPOWER | XPPOWER | ||
Surface Sensor for High Rel & Aerospace FEATURES ESCC qualified. ESCC Detail Specification No. 4006014 ESCC Part No. 400601409. Flat aluminum housing. Radiation cross linked modified fluoropolymer insulation. Operating temperature range: -60°C to + 160°C. APPLICATIONS Satellite electric motors. Monitoring of gearboxes in sat 文件：137.64 Kbytes 頁數(shù)：3 Pages | TEC 泰科電子 | TEC | ||
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D2PAK package Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess 文件：1.14052 Mbytes 頁數(shù)：19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/g10n03/marking.html">G10N03；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET Description The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.10788 Mbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g10n10a/marking.html">G10N10A；Package：TO-252；Power switching application Description The G10N10A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply 文件：4.29607 Mbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲印：G10N10A；Package：SOP-8；DC/DC Primary Side Switch Description The G10N10AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Primary Side Switch ● Telecom/Server ● Synchronous Rectification 文件：2.05902 Mbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation Fast IGBT in NPT-technology ? 75 lower Eoff compared to previous generation combined with low conduction losses ? Short circuit withstand time – 10 μs ? Designed for: - Motor controls - Inverter ? NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg 文件：795.39 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/g10n65/marking.html">G10N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. Application l Active power factor correction l 文件：801.22 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD | ||
絲?。?a target="_blank" title="Marking" href="/g10n80/marking.html">G10N80；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. Application l LED power supplies l Cell Phone C 文件：878.17 Kbytes 頁數(shù)：6 Pages | GOFORD 谷峰半導(dǎo)體 | GOFORD |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+R
- 性質(zhì)：
表面帖裝型 （SMD）_差分放大器射極輸出 （Dual）
- 封裝形式：
貼片封裝
- 極限工作電壓：
50V
- 最大電流允許值：
0.1A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
5
- 可代換的型號：
FMG10A,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
H-21
- vtest：
50
- htest：
999900
- atest：
0.05
- wtest：
0
產(chǎn)品屬性
- 產(chǎn)品編號：
G10
- 制造商：
XP Power
- 類別：
電源 - 板安裝 > 直流轉(zhuǎn)換器
- 系列：
XP EMCO - G (1.5W)
- 包裝：
管件
- 類型：
高電壓 - 隔離模塊
- 電壓 - 輸入（最小值）：
0.7V
- 電壓 - 輸入（最大值）：
12V
- 電壓 - 輸出 1：
1000V
- 電流 - 輸出（最大值）：
1.5mA
- 應(yīng)用：
ITE（商業(yè)）
- 特性：
比例輸出
- 工作溫度：
-10°C ~ 60°C
- 安裝類型：
通孔
- 封裝/外殼：
4-DIP 模塊
- 大小 / 尺寸：
1.50" 長 x 1.50" 寬 x 0.63" 高（38.1mm x 38.1mm
- 描述：
DC DC CONVERTER 1000V 1.5W
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
XP Power |
25+ |
全新-電源模塊 |
17769 |
DC-DC轉(zhuǎn)換器電源模塊G10交期短價格優(yōu)#即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
XP Power |
25+ |
N/A |
12000 |
一級代理保證進(jìn)口原裝正品假一罰十價格合理 |
詢價 | ||
ADI/亞德諾 |
QFN |
6698 |
詢價 | ||||
NA |
2023+環(huán)?，F(xiàn)貨 |
TSSOP8 |
10 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價 | ||
NA |
23+ |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
NULL |
04+/05+ |
SOT-23 |
202 |
全新原裝100真實(shí)現(xiàn)貨供應(yīng) |
詢價 | ||
GMT |
13+ |
TO-252 |
3549 |
原裝分銷 |
詢價 | ||
FSC |
2016+ |
TO-220 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
GMT |
23+ |
TO252 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
konica |
24+ |
QFP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 |
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