絲?。?strong>G08；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 頁數(shù)：9 Pages

ROHM

羅姆

絲印：G08；Package：VSSOP(DGK)；LM4808 Low Voltage High Power Audio Power Amplifier

1FEATURES 2? WSON, VSSOP, and SOIC Surface Mount Packaging ? Switch On/Off Click Suppression ? Excellent Power Supply Ripple Rejection ? Unity-Gain Stable ? Minimum External Components APPLICATIONS ? Headphone Amplifier ? Personal Computers ? Portable Electronic Devices KEY SPECIFIC

文件：1.49999 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲印：G08；Package：VSSOP(DGK)；LM4808 Low Voltage High Power Audio Power Amplifier

1FEATURES 2? WSON, VSSOP, and SOIC Surface Mount Packaging ? Switch On/Off Click Suppression ? Excellent Power Supply Ripple Rejection ? Unity-Gain Stable ? Minimum External Components APPLICATIONS ? Headphone Amplifier ? Personal Computers ? Portable Electronic Devices KEY SPECIFIC

文件：1.49999 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲?。?strong>G08；Package：VSSOP(DGK)；LM4808 Low Voltage High Power Audio Power Amplifier

1FEATURES 2? WSON, VSSOP, and SOIC Surface Mount Packaging ? Switch On/Off Click Suppression ? Excellent Power Supply Ripple Rejection ? Unity-Gain Stable ? Minimum External Components APPLICATIONS ? Headphone Amplifier ? Personal Computers ? Portable Electronic Devices KEY SPECIFIC

文件：1.49999 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲印：G08；Package：VSSOP(DGK)；LM4808 Low Voltage High Power Audio Power Amplifier

1FEATURES 2? WSON, VSSOP, and SOIC Surface Mount Packaging ? Switch On/Off Click Suppression ? Excellent Power Supply Ripple Rejection ? Unity-Gain Stable ? Minimum External Components APPLICATIONS ? Headphone Amplifier ? Personal Computers ? Portable Electronic Devices KEY SPECIFIC

文件：1.49999 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲?。?strong>g08；Package：SOT753；2-input AND gate

1. General description XC7SET08 is a high-speed Si-gate CMOS device. It provides a 2-input AND function. 2. Features and benefits ? Symmetrical output impedance ? High noise immunity ? Low power dissipation ? Balanced propagation delays ? TTL input levels ? ESD protection: ? HBM JESD22-A1

文件：199.16 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲印：G08；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 頁數(shù)：38 Pages

MICROCHIP

微芯科技

絲?。?a target="_blank" title="Marking" href="/g080n06/marking.html">G080N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G080N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.39 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/g080n10/marking.html">G080N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0175 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲印：G080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04223 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體