| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
G080N10M | 絲印:G080N10;Package:TO-263;N-Channel Enhancement Mode Power MOSFET Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:1.0175 Mbytes 頁數(shù):6 Pages | GOFORD 谷峰半導體 | GOFORD | |
N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:1.04223 Mbytes 頁數(shù):6 Pages | GOFORD 谷峰半導體 | GOFORD | ||
N-Channel Enhancement Mode Power MOSFET Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:1.06561 Mbytes 頁數(shù):6 Pages | GOFORD 谷峰半導體 | GOFORD | ||
N-Channel Enhancement Mode Power MOSFET Description The GT080N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件:952.77 Kbytes 頁數(shù):6 Pages | GOFORD 谷峰半導體 | GOFORD |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
國產 |
詢價 | ||
CMO |
24+ |
65200 |
詢價 | ||||
CHIMEI奇美 |
23+ |
800480 |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
CMO |
23+ |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
G |
24+ |
S |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
G |
23+ |
S |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
G |
2026+ |
S |
2000 |
原裝正品,假一罰十! |
詢價 | ||
FERRAZ/羅蘭熔斷器 |
23+ |
標準封裝 |
5000 |
原廠授權一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質保 |
詢價 | ||
ASTEC |
2026+ |
SOT353 |
12500 |
全新原裝正品,本司專業(yè)配單,大單小單都配 |
詢價 |
相關規(guī)格書
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相關庫存
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- G08BB
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- G08CB
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- G08P06D3A
- G08RB
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- G09N06S2
- G0A100HA0023

