N-Channel QFET? MOSFET 200 V, 0.85 A, 1.40 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：2.04983 Mbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/4nf20l/marking.html">4NF20L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V ' b=1.0A @Ves = 10V | Roson) ￡ 1.35Q @Ves = 10V | SOT-223 package.

文件：3.04984 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

200V N-Channel MOSFET

Features ? 3.0 A, 200 V, RDS(on) = 1.4 ? (Max.) @ VGS = 10 V ? Low gate charge (Typ. 5.0 nC) ? Low Crss (Typ. 5.0 pF) ? Fast switching ? 100 avalanche tested ? Improved dv/dt capability

文件：701.83 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：329.68 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：519.64 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體