絲?。?a target="_blank" title="Marking" href="/4nf20l/marking.html">4NF20L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V ' b=1.0A @Ves = 10V | Roson) ￡ 1.35Q @Ves = 10V | SOT-223 package.

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TECHPUBLIC

臺舟電子

200V N-Channel MOSFET

Features ? 3.0 A, 200 V, RDS(on) = 1.4 ? (Max.) @ VGS = 10 V ? Low gate charge (Typ. 5.0 nC) ? Low Crss (Typ. 5.0 pF) ? Fast switching ? 100 avalanche tested ? Improved dv/dt capability

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

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FAIRCHILD

仙童半導(dǎo)體