N-Channel QFET? MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

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FAIRCHILD

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250V N-Channel MOSFET

Features ? 3.0 A, 250 V, RDS(on) = 1.75 ? (Max) @VGS = 10 V ? Low gate charge (Typ. 4.3 nC) ? Low Crss (Typ. 4.8 pF) ? Fast switching ? 100 avalanche tested ? Improved dv/dt capability

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FAIRCHILD

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N-Channel QFET MOSFET

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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