200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半導體

200V N-Channel MOSFET

ONSEMI

安森美半導體

200V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

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FAIRCHILD

仙童半導體

N-Channel QFET? MOSFET 200 V, 0.85 A, 1.40 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：2.04983 Mbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

絲?。?a target="_blank" title="Marking" href="/4nf20l/marking.html">4NF20L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V ' b=1.0A @Ves = 10V | Roson) ￡ 1.35Q @Ves = 10V | SOT-223 package.

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TECHPUBLIC

臺舟電子

功率 MOSFET，N 溝道，邏輯電平，QFET?，200 V，0.85 A，1.4 Ω，SOT-223

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進的 MOSFET 技術(shù)已專門定制用來降低導通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?0.85A, 200V, RDS(on)= 1.35Ω（最大值）@VGS = 10 V, ID = 0.425A柵極電荷低（典型值：4nC)\n?低 Crss（典型值6pF)\n?100% 經(jīng)過雪崩擊穿測試\n?低電平柵極驅(qū)動要求允許直接從邏輯驅(qū)動運行。\n?Low level gate drive requirments allowingdirect operationfrom logic drives;

ONSEMI

安森美半導體