500V N-Channel MOSFET

500V N-Channel MOSFET

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

500V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

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TGS

500V N-Channel MOSFET

ONSEMI

安森美半導(dǎo)體

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：628.88 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

500V N-Channel MOSFET

文件：669.57 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

500V N-Channel MOSFET

文件：669.57 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

TO252-3L, JEDEC OPTION AA, PACKING CONFIGURATION Figure 1.0

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Power MOSFET, N-Channel, QFET?, 500 V, 4 A, 1.4 Ω, DPAK

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy ?4.0A, 500V, RDS(on) = 1.4Ω @VGS = 10 V \n?Low gate charge (typical 18 nC) \n?Low Crss (typical 15 pF) \n?Fast switching \n?100% avalanche tested \n?Improved dv/dt capability;

ONSEMI

安森美半導(dǎo)體