| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FQD5P20 | 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：614.5 Kbytes 頁(yè)數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FQD5P20 | 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：663.26 Kbytes 頁(yè)數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FQD5P20 | P-Channel QFET? MOSFET -200 V, -3.7 A, 1.4 Ω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：1.27206 Mbytes 頁(yè)數(shù)：11 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
絲?。?strong>FQD5P20；Package：DPAK；P-Channel QFET? MOSFET -200 V, -3.7 A, 1.4 Ω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：1.27206 Mbytes 頁(yè)數(shù)：11 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
FQD5P20 | 功率 MOSFET，P 溝道，QFET?，-200 V，-3.7 A，1.4 ?，DPAK 該 P 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體?的專有平面條形和 DMOS 技術(shù)生產(chǎn)。 這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來(lái)降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。 這些設(shè)備適用于開關(guān)模式電源、音頻放大器、直流電機(jī)控制和可變開關(guān)電源應(yīng)用。 ?-3.7 A、-250 V、RDS(on)= 1.4 Ω（最大值），需 VGS = -10 V、ID = -1.85 A柵極電荷低（典型值： 10nC)\n?低 Crss（典型值 12pF)\n?100% 經(jīng)過(guò)雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn)\n?RoHS Compliant; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
P-channel Enhancement Mode Power MOSFET Features ? VDS= -200V, ID= -3.6A RDS(ON) 文件：779.35 Kbytes 頁(yè)數(shù)：6 Pages | BYCHIP 百域芯 | BYCHIP | ||
200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：663.26 Kbytes 頁(yè)數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
200V P-Channel MOSFET 文件：663.26 Kbytes 頁(yè)數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
技術(shù)參數(shù)
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
P-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
-200
- VGS Max (V)：
±30
- VGS(th) Max (V)：
-5
- ID Max (A)：
-3.7
- PD Max (W)：
45
- RDS(on) Max @ VGS = 10 V(mΩ)：
1400
- Qg Typ @ VGS = 10 V (nC)：
10
- Ciss Typ (pF)：
330
- Package Type：
DPAK-3/TO-252-3
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
TO-252(DPAK) |
8866 |
詢價(jià) | |||
仙童 |
06+ |
TO-252 |
8000 |
原裝 |
詢價(jià) | ||
FSC |
23+ |
TO-252 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
FAIRCHIL |
25+ |
TO-252 |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理 |
詢價(jià) | ||
FAIRCHILD |
20+ |
TO-252(DPAK) |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
ON |
20+ |
SMD |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
to-220 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
FAIRCHILD |
25+ |
SOT-252 |
32500 |
普通 |
詢價(jià) | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
Fairchild(飛兆/仙童) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價(jià) |
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