N-Channel QFET? MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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FAIRCHILD

仙童半導(dǎo)體

絲印：FQD2N60C；Package：D-PAK；N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

文件：979.34 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：568.53 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

文件：863.86 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

文件：863.86 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.05894 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

600V N-Channel MOSFET

文件：768.23 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，QFET?，600 V，1.9 A，4.7 ?，DPAK

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?1.9A, 600V, RDS(on)= 4.7Ω（最大值）@VGS = 10 V, ID = 0.95A柵極電荷低（典型值：8.5nC)\n?低 Crss（典型值4.3pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn)\n?RoHS compliant;

ONSEMI

安森美半導(dǎo)體