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          首頁 >FQD2N60C>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FQD2N60C

          600V N-Channel MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:617.97 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60C

          N-Channel QFET? MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:742.85 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60C

          N-Channel QFET? MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

          文件:748.29 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60C

          N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

          Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

          文件:979.34 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQD2N60C

          N-Channel QFET MOSFET

          Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductor?s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, an

          文件:842.74 Kbytes 頁數(shù):8 Pages

          KERSEMI

          FQD2N60C

          600V N-Channel MOSFET

          文件:863.86 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60C

          N-Channel 650 V (D-S) MOSFET

          文件:1.05894 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          FQD2N60C

          600V N-Channel MOSFET

          文件:863.86 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD2N60CTM

          絲印:FQD2N60C;Package:D-PAK;N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

          Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

          文件:979.34 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQD2N60CTF

          N-Channel QFET? MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

          文件:748.29 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            600

          • VGS Max (V):

            ±30

          • VGS(th) Max (V):

            4

          • ID Max (A):

            1.9

          • PD Max (W):

            44

          • RDS(on) Max @ VGS = 10 V(mΩ):

            4700

          • Qg Typ @ VGS = 10 V (nC):

            8.5

          • Ciss Typ (pF):

            180

          • Package Type:

            DPAK-3/TO-252-3

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          ONSEMI/安森美
          25+
          TO-252
          20300
          ONSEMI/安森美原裝特價(jià)FQD2N60C即刻詢購立享優(yōu)惠#長期有貨
          詢價(jià)
          FAIRCHILD
          24+
          TO-252(DPAK)
          8866
          詢價(jià)
          FSC
          2016+
          SOT252
          2600
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價(jià)
          FCS
          25+
          TO252
          827
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價(jià)
          TO-252
          23+
          NA
          15659
          振宏微專業(yè)只做正品,假一罰百!
          詢價(jià)
          FAIRCHILD
          18+
          TO252
          85600
          保證進(jìn)口原裝可開17%增值稅發(fā)票
          詢價(jià)
          FAIRCHIL
          25+
          TO-252
          90000
          一級代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
          詢價(jià)
          FAIRCHILD/仙童
          25+
          TO252
          15000
          全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
          詢價(jià)
          仙童
          24+
          TO-252
          65300
          一級代理/放心購買!
          詢價(jià)
          FAIRCHILD
          25+
          SOT-252
          32500
          普通
          詢價(jià)
          更多FQD2N60C供應(yīng)商 更新時(shí)間2026-1-20 20:45:00
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