150V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：759.18 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =42mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：361.99 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

150V N-Channel MOSFET

文件：781.81 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，QFET?，150V，50A，42m?，TO-3P

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)模式電源、音頻放大器、直流電機(jī)控制和可變開關(guān)電源應(yīng)用。 ?50A, 150V, RDS(on)= 42mΩ（最大值）@VGS = 10 V, ID = 25A柵極電荷低（典型值：85nC)\n?低 Crss（典型值100pF)\n?100% 經(jīng)過雪崩擊穿測試\n?175°C最大結(jié)溫額定值\"\n? 175°C Maximum Junction Temperature Rating;

ONSEMI

安森美半導(dǎo)體

150V N-Channel MOSFET

文件：781.81 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

150V N-Channel MOSFET

文件：781.81 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體