Fusible Flameproof Resistors

FEATURES High stability, accuracy, and reliability Noncombustible coating Uniform fusing time Low temperature coefficient (350ppm/o C ) For wire wound version, see FKN

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RFE

RFE international

Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：68.83 Kbytes 頁(yè)數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：71.21 Kbytes 頁(yè)數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：71.29 Kbytes 頁(yè)數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：72.24 Kbytes 頁(yè)數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體