Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：68.83 Kbytes 頁(yè)數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes)

文件：29.36 Kbytes 頁(yè)數(shù)：2 Pages

RECTRON

麗正國(guó)際

Schottky Diodes

分立

Rectron

麗正國(guó)際

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast

文件：686.76 Kbytes 頁(yè)數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：71.21 Kbytes 頁(yè)數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

文件：71.29 Kbytes 頁(yè)數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體