64K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C640U is a 64K bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data tra

文件：102.51 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導體

VersaKit-30xx Development System Overview

? VRS51L3074 in QFP-64 package soldered onboard (contact Ramtron for details on the VRS51L3174 in QFP-44 package and the VRS51L2070) ? FM31xx MCU companion, FM25xx SPI FRAM and FM24xx I2C FRAM devices installed ? 5x2 header to connect VJTAG-USB programming/debugging interface ? 2 DB9 serial por

文件：8.13308 Mbytes 頁數(shù)：28 Pages

RAMTRON

2M-BIT SERIAL FLASH MEMORY

1. Description The FM25F02A is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms. The FM25F02A supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as Dual I/O. The FM25F02A can be programmed 1 to 256 bytes at

文件：1.41276 Mbytes 頁數(shù)：43 Pages

FUDAN

上海復旦微

2M-BIT SERIAL FLASH MEMORY

1. Description The FM25F02A is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms. The FM25F02A supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as Dual I/O. The FM25F02A can be programmed 1 to 256 bytes at

文件：1.41276 Mbytes 頁數(shù)：43 Pages

FUDAN

上海復旦微

32M-BIT Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI

GENERAL DESCRIPTION The FM25Q32 Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing

文件：2.70281 Mbytes 頁數(shù)：61 Pages

FIDELIX

128Kb Serial 3V F-RAM Memory

Description The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：508.13 Kbytes 頁數(shù)：15 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導體公司

128-Kbit (16K ? 8) Serial (SPI) F-RAM

Functional Description The FM25V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-leve

文件：777.8 Kbytes 頁數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導體公司

128-Kbit (16K ? 8) Serial (SPI) F-RAM

Functional Description The FM25V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-leve

文件：777.8 Kbytes 頁數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導體公司

128-Kbit (16K ? 8) Serial (SPI) F-RAM

Functional Description The FM25V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-leve

文件：777.8 Kbytes 頁數(shù)：22 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導體公司

128Kb Serial 3V F-RAM Memory

Description The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

文件：508.13 Kbytes 頁數(shù)：15 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導體公司