| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：FFs；Package：SOT23；NPN Silicon Darlington Transistors 文件：528.92 Kbytes 頁數(shù)：7 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/ffsb0665a/marking.html">FFSB0665A；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 6 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：315.62 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲印：FFSB0665B；Package：D2PAK2；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6A, 650 V, D2, D2PAK-2L Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide 文件：334.56 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/ffsb0665b/marking.html">FFSB0665B；Package：D2PAK；Silicon Carbide Schottky Diode 650 V, 6 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide 文件：332.3 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/ffsb0865a/marking.html">FFSB0865A；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 8 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：293.38 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/ffsb0865b/marking.html">FFSB0865B；Package：D2PAK2；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8A, 650 V, D2, D2PAK-2L Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide 文件：335.75 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/ffsb0865b/marking.html">FFSB0865B；Package：D2PAK；Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide 文件：333.21 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/ffsb10120a/marking.html">FFSB10120A；Package：D2PAK；Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：316.16 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲印：FFSB1065A；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：299.15 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/ffsb1065b/marking.html">FFSB1065B；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：331.61 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+Darl
- 性質(zhì)：
表面帖裝型 （SMD）
- 封裝形式：
貼片封裝
- 極限工作電壓：
40V
- 最大電流允許值：
0.5A
- 最大工作頻率：
200MHZ
- 引腳數(shù)：
3
- 可代換的型號(hào)：
BCV47,
- 最大耗散功率：
0.36W
- 放大倍數(shù)：
β>20000
- 圖片代號(hào)：
H-15
- vtest：
40
- htest：
200000000
- atest：
0.5
- wtest：
0.36
詳細(xì)參數(shù)
- 型號(hào)：
FFS
- 功能描述：
達(dá)林頓晶體管 SOT23 NPN DARLINGTON
- RoHS：
否
- 制造商：
Texas Instruments
- 配置：
Octal
- 晶體管極性：
NPN 集電極—發(fā)射極最大電壓
- VCEO：
50 V 發(fā)射極 - 基極電壓
- VEBO：
集電極—基極電壓
- 最大直流電集電極電流：
0.5 A
- 最大工作溫度：
+ 150 C
- 安裝風(fēng)格：
SMD/SMT
- 封裝/箱體：
SOIC-18
- 封裝：
Reel
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT23 |
154485 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ONSEMI/安森美 |
25+ |
SOT23 |
90000 |
ONSEMI/安森美全新特價(jià)BCV27即刻詢購立享優(yōu)惠#長期有貨 |
詢價(jià) | ||
FSC |
15+ |
原廠原裝 |
414000 |
進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
恩XP |
24+ |
SOT23 |
890000 |
全新原裝現(xiàn)貨,假一罰十 |
詢價(jià) | ||
NEXPERIA/安世 |
2019+ |
SOT-23 |
78550 |
原廠渠道 可含稅出貨 |
詢價(jià) | ||
NEXPERIA/安世 |
20+ |
SOT-23 |
200000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
SIPUSEMI |
2021+ |
SOT-23 |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
詢價(jià) | ||
NEXPERIA/安世 |
23+ |
SOT-23 |
100586 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
ON/安森美 |
23+ |
25850 |
新到現(xiàn)貨,只有原裝 |
詢價(jià) | |||
恩XP |
25+ |
SOT-23 |
6500 |
十七年專營原裝現(xiàn)貨一手貨源,樣品免費(fèi)送 |
詢價(jià) |
相關(guān)芯片絲印
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相關(guān)庫存
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- FFSB10120A-F085
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