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          首頁 >FFSB0665B>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FFSB0665B

          絲?。?strong>FFSB0665B;Package:D2PAK2;Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6A, 650 V, D2, D2PAK-2L

          Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

          文件:334.56 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665B

          絲?。?strong>FFSB0665B;Package:D2PAK;Silicon Carbide Schottky Diode 650 V, 6 A

          文件:380.94 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665B-F085

          絲?。?strong>FFSB0665B;Package:D2PAK;Silicon Carbide Schottky Diode 650 V, 6 A

          Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

          文件:332.3 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665B-F085

          絲?。?strong>FFSB0665B;Package:D2PAK;Silicon Carbide Schottky Diode

          文件:381.47 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665B_V01

          Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6A, 650 V, D2, D2PAK-2L

          Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

          文件:334.56 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665B-F085_V01

          Silicon Carbide Schottky Diode 650 V, 6 A

          Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

          文件:332.3 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665BD

          Silicon Carbide Schottky Diode 650 V, 6 A

          文件:380.94 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665B

          Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L

          Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the ? High UIS, Surge Current, and Avalanche\n? 49mJ @ 25C\n? High Junction Temperature\n? Tj = 175C\n? Low Vf\n? 1.41V\n? No Qrr\n? ;

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665B

          Package:TO-263-3,D2Pak(2 引線 + 接片),TO-263AB;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:650V 6A SIC SBD GEN1.5

          ONSEMI

          安森美半導(dǎo)體

          FFSB0665B-F085

          Silicon Carbide (SiC) Schottky Diode - EliteSiC, 6A, 650V, D2, D2PAK

          Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as ? Max Junction Temperature 175 oC\n? PPAP Capable\n? Avalanche Rated 24.5 mJ\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? Ease of Paralleling\n? No Reverse Recovery / No Forward Recovery\n? AEC-Q101 Qualified;

          ONSEMI

          安森美半導(dǎo)體

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            FFSB0665B

          • 制造商:

            onsemi

          • 類別:

            分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

          • 包裝:

            管件

          • 二極管類型:

            碳化硅肖特基

          • 電流 - 平均整流 (Io):

            8A

          • 速度:

            無恢復(fù)時(shí)間 > 500mA(Io)

          • 不同?Vr、F 時(shí)電容:

            259pF @ 1V,100kHz

          • 安裝類型:

            表面貼裝型

          • 封裝/外殼:

            TO-263-3,D2Pak(2 引線 + 接片),TO-263AB

          • 供應(yīng)商器件封裝:

            D2PAK-2(TO-263-2)

          • 工作溫度 - 結(jié):

            -55°C ~ 175°C

          • 描述:

            650V 6A SIC SBD GEN1.5

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          onsemi(安森美)
          25+
          D2PAK
          11543
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          ON/安森美
          22+
          24000
          原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
          詢價(jià)
          24+
          N/A
          67000
          一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
          詢價(jià)
          onsemi
          25+
          D?PAK-2(TO-263-2)
          9350
          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          詢價(jià)
          ON SEMICONDUCTOR
          24+
          con
          35960
          查現(xiàn)貨到京北通宇商城
          詢價(jià)
          ON/安森美
          25+
          電聯(lián)咨詢
          7800
          公司現(xiàn)貨,提供拆樣技術(shù)支持
          詢價(jià)
          onsemi(安森美)
          25+
          D2PAK
          11543
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          ONSEMI
          兩年內(nèi)
          N/A
          4000
          原裝現(xiàn)貨,實(shí)單價(jià)格可談
          詢價(jià)
          ON(安森美)
          2447
          TO-263-3
          115000
          800個(gè)/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
          詢價(jià)
          ON/安森美
          23+
          TO-263
          10000
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
          詢價(jià)
          更多FFSB0665B供應(yīng)商 更新時(shí)間2026-1-19 22:59:00
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