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          首頁 >絲印反查>FDS4435

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FDS4435

          絲?。?strong>FDS4435;30V P-Channel PowerTrenchò MOSFET

          General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

          文件:168.22 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435BZ

          絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ;Package:SO-8;P-Channel PowerTrench MOSFET -30V, -8.8A, 20m?

          Features  Max rDS(on) = 20m? at VGS = -10V, ID = -8.8A  Max rDS(on) = 35m? at VGS = -4.5V, ID = -6.7A  Extended VGSS range (-25V) for battery applications  HBM ESD protection level of ±3.8KV typical (note 3)  High performance trench technology for extremely low rDS(on)  High power and

          文件:330.44 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435BZ

          絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ;Package:SOP-8;-30V P-Channel MOSFET

          General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

          文件:429.15 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          FDS4435BZ-F085

          絲印:FDS4435BZ;Package:SO-8;P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m

          文件:416.89 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435

          絲?。?strong>FDS4435;30V P-Channel PowerTrenchò MOSFET

          General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

          文件:168.22 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435BZ

          絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ;Package:SO-8;P-Channel PowerTrench MOSFET -30V, -8.8A, 20m?

          Features  Max rDS(on) = 20m? at VGS = -10V, ID = -8.8A  Max rDS(on) = 35m? at VGS = -4.5V, ID = -6.7A  Extended VGSS range (-25V) for battery applications  HBM ESD protection level of ±3.8KV typical (note 3)  High performance trench technology for extremely low rDS(on)  High power and

          文件:330.44 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435BZ

          絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ;Package:SOP-8;-30V P-Channel MOSFET

          General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

          文件:429.15 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          FDS4435BZ-F085

          絲印:FDS4435BZ;Package:SO-8;P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m

          文件:416.89 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435

          P-Channel Logic Level PowerTrenchTM MOSFET

          General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features ? –8.8 A, –30 V RDS(ON) = 20 mW @ VGS

          文件:637.39 Kbytes 頁數(shù):8 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS4435

          P-Channel Logic Level PowerTrench??OSFET

          General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features ? –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =

          文件:264.93 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          詳細(xì)參數(shù)

          • 型號:

            FDS4435

          • 功能描述:

            MOSFET SO-8 P-CH -30V

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號品牌批號封裝庫存備注價格
          FAIRCHILD
          25+23+
          SOP-8
          120000
          全新原裝公司現(xiàn)貨,特價絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價
          FSC
          04+
          3.9MM
          13857
          全新原裝 貨期兩周
          詢價
          ONSEMI/安森美
          25+
          SOP-8
          34804
          ONSEMI/安森美全新特價FDS4435即刻詢購立享優(yōu)惠#長期有貨
          詢價
          FAIRCHILD
          04+
          SOP8
          2900
          全新原裝絕對自己公司現(xiàn)貨
          詢價
          FAIRCHILD
          23+
          SOIC-8
          65400
          詢價
          FSC
          23+
          SOP
          5306
          原廠原裝正品
          詢價
          FAIRCHILD/仙童
          15+
          SOP8
          22
          原裝現(xiàn)貨、真實庫存
          詢價
          FAIRCHILD
          25+
          SOP-8.
          6500
          十七年專營原裝現(xiàn)貨一手貨源,樣品免費送
          詢價
          FAIRCHILD
          2430+
          SOP8
          8540
          只做原裝正品假一賠十為客戶做到零風(fēng)險!!
          詢價
          onsemi
          25+
          8-SOIC
          21000
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          更多FDS4435供應(yīng)商 更新時間2026-1-18 16:50:00
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