絲印：FDS4435；30V P-Channel PowerTrenchò MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

文件：168.22 Kbytes 頁數：7 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20m?

Features
Max rDS(on) = 20m? at VGS = -10V, ID = -8.8A
Max rDS(on) = 35m? at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

文件：330.44 Kbytes 頁數：8 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

文件：429.15 Kbytes 頁數：7 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ；Package：SO-8；P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m

文件：416.89 Kbytes 頁數：7 Pages

ONSEMI

安森美半導體

絲?。?strong>FDS4435；30V P-Channel PowerTrenchò MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

文件：168.22 Kbytes 頁數：7 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20m?

Features
Max rDS(on) = 20m? at VGS = -10V, ID = -8.8A
Max rDS(on) = 35m? at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

文件：330.44 Kbytes 頁數：8 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

文件：429.15 Kbytes 頁數：7 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/fds4435bz/marking.html">FDS4435BZ；Package：SO-8；P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m

文件：416.89 Kbytes 頁數：7 Pages

ONSEMI

安森美半導體

P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features ? –8.8 A, –30 V RDS(ON) = 20 mW @ VGS

文件：637.39 Kbytes 頁數：8 Pages

FAIRCHILD

仙童半導體

P-Channel Logic Level PowerTrench??OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features ? –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =

文件：264.93 Kbytes 頁數：5 Pages

FAIRCHILD

仙童半導體