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          首頁 >絲印反查>FDS4435BZ

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FDS4435BZ

          絲?。?strong>FDS4435BZ;Package:SO-8;P-Channel PowerTrench MOSFET -30V, -8.8A, 20m?

          Features  Max rDS(on) = 20m? at VGS = -10V, ID = -8.8A  Max rDS(on) = 35m? at VGS = -4.5V, ID = -6.7A  Extended VGSS range (-25V) for battery applications  HBM ESD protection level of ±3.8KV typical (note 3)  High performance trench technology for extremely low rDS(on)  High power and

          文件:330.44 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435BZ

          絲印:FDS4435BZ;Package:SOP-8;-30V P-Channel MOSFET

          General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

          文件:429.15 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          FDS4435BZ-F085

          絲?。?strong>FDS4435BZ;Package:SO-8;P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m

          文件:416.89 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435BZ

          絲印:FDS4435BZ;Package:SO-8;P-Channel PowerTrench MOSFET -30V, -8.8A, 20m?

          Features  Max rDS(on) = 20m? at VGS = -10V, ID = -8.8A  Max rDS(on) = 35m? at VGS = -4.5V, ID = -6.7A  Extended VGSS range (-25V) for battery applications  HBM ESD protection level of ±3.8KV typical (note 3)  High performance trench technology for extremely low rDS(on)  High power and

          文件:330.44 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435BZ

          絲?。?strong>FDS4435BZ;Package:SOP-8;-30V P-Channel MOSFET

          General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

          文件:429.15 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          FDS4435BZ-F085

          絲?。?strong>FDS4435BZ;Package:SO-8;P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m

          文件:416.89 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS4435BZ

          30 Volt P-Channel PowerTrench MOSFET

          General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

          文件:94.81 Kbytes 頁數(shù):4 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS4435BZ

          P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m廓

          General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

          文件:288.78 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS4435BZ_07

          P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m廓

          General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

          文件:288.78 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS4435BZ-NL

          P-Channel 30-V (D-S) MOSFET

          文件:1.00471 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          詳細(xì)參數(shù)

          • 型號:

            FDS4435BZ

          • 功能描述:

            MOSFET 30V.PCH POWER TRENCH MOSFET

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ON/安森美
          22+
          SOP8
          57500
          原裝正品
          詢價
          ON
          21+
          SOP8
          2500
          原裝現(xiàn)貨、工廠庫存
          詢價
          ONSEMI/安森美
          25+
          SOIC-8
          20300
          ONSEMI/安森美原裝特價FDS4435BZ即刻詢購立享優(yōu)惠#長期有貨
          詢價
          ON(安森美)
          25+
          7589
          全新原裝現(xiàn)貨,支持排單訂貨,可含稅開票
          詢價
          FSC
          12
          SOP-8
          8000
          進(jìn)口原裝現(xiàn)貨,假一賠十
          詢價
          FAIRCHILD
          17+
          SOP-8
          100000
          保證原裝正品!優(yōu)勢渠道供應(yīng),可訂貨
          詢價
          Fairchild
          24+
          SOP
          9000
          公司只做原裝正品!現(xiàn)貨庫存!可隨時看貨!
          詢價
          FAIRCHILD
          24+
          SOP-8
          665000
          一級代理/全新現(xiàn)貨/長期供應(yīng)!
          詢價
          ONSEMI
          25+
          NA
          30000
          全新原裝!優(yōu)勢庫存熱賣中!
          詢價
          ON
          21+
          SOP8
          12000
          十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!
          詢價
          更多FDS4435BZ供應(yīng)商 更新時間2026-1-18 15:38:00
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