絲?。?strong>FDPF035N06B；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 88 A, 3.5 m

Description This N?Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on?state resistance while maintaining superior switching performance. Features ? RDS(on) = 2.91 m (Typ.)@ VGS = 10 V, ID = 88 A ? Low FOM RDS(on)*QG

文件：367.53 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>FDPF035N06B；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 88 A, 3.5 m

Description This N?Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on?state resistance while maintaining superior switching performance. Features ? RDS(on) = 2.91 m (Typ.)@ VGS = 10 V, ID = 88 A ? Low FOM RDS(on)*QG

文件：367.53 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=88A@ TC=25℃ ·Drain Source Voltage- : VDSS=660V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.6 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel PowerTrench MOSFET

文件：673.33 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體