| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FDS6912 | 絲?。?strong>FDS6912;Package:SO-8;Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c 文件:176.41 Kbytes 頁數(shù):7 Pages | ONSEMI 安森美半導體 | ONSEMI | |
絲?。?a target="_blank" title="Marking" href="/fds6912a/marking.html">FDS6912A;Package:SO-8;Dual N-Channel Logic Level PowerTrenchò MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a 文件:224.24 Kbytes 頁數(shù):7 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/fds6912a/marking.html">FDS6912A;Package:SOP-8;30V Dual N-Channel MOSFET Features ? Fast switching speed ? Low gate charge ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 6A RDS(ON) 文件:387.35 Kbytes 頁數(shù):6 Pages | UMW 友臺半導體 | UMW | ||
FDS6912 | 絲?。?strong>FDS6912;Package:SO-8;Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c 文件:176.41 Kbytes 頁數(shù):7 Pages | ONSEMI 安森美半導體 | ONSEMI | |
絲?。?a target="_blank" title="Marking" href="/fds6912a/marking.html">FDS6912A;Package:SO-8;Dual N-Channel Logic Level PowerTrenchò MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a 文件:224.24 Kbytes 頁數(shù):7 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲印:FDS6912A;Package:SOP-8;30V Dual N-Channel MOSFET Features ? Fast switching speed ? Low gate charge ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 6A RDS(ON) 文件:387.35 Kbytes 頁數(shù):6 Pages | UMW 友臺半導體 | UMW | ||
FDS6912 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c 文件:219.88 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c 文件:176.41 Kbytes 頁數(shù):7 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a 文件:222.94 Kbytes 頁數(shù):4 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
FDS6912 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET 文件:76.47 Kbytes 頁數(shù):5 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD |
詳細參數(shù)
- 型號:
FDS6912
- 功能描述:
MOSFET SO-8 DUAL N-CH 30V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
04+ |
SOP8 |
1400 |
全新原裝絕對優(yōu)勢現(xiàn)貨特價! |
詢價 | ||
FAIRCHILD |
24+ |
SOP8 |
9800 |
一級代理/全新原裝現(xiàn)貨/長期供應(yīng)! |
詢價 | ||
FAIRCHILD/仙童 |
2021+ |
SOP-8 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
onsemi(安森美) |
25+ |
SOIC-8 |
11580 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
24+ |
SOP |
10 |
詢價 | ||||
FSC |
25+ |
SO-8 |
2750 |
福安甌為您提供真芯庫存,真誠服務(wù) |
詢價 | ||
FSC |
23+ |
SO-8 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
FAIRCHILD |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
原廠 |
23+ |
SOP8 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
FAIRCHILD |
25+ |
DIP-32 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 |
相關(guān)芯片絲印
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- BD4924FVE
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- BD49K59G
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- AP7347DQ-XXXFDZW-7
- BD4924
- PZU7.5B1
- BD49K59G-TL
- RP130Q161B
- BD4924G-TL
- BD49E59G-TL
- BD49K59G-TR
- BD49K59G-TL
- BD4924G-TR
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- BD49E59G-TL
- BD4924G-TL
- BD49E59G-TR
- BD4924FVE-TR
- BD4924G-TR
- BD49E59G-TR
- BD4924FVE
- BD4924FVE-TR
- BD49E59G-TR
- BD49K59G-TL
- BD4924FVE-TL
- BD49E59G
- BD4924G-TL
- BD4924FVE-TR
- BD4924G-TL
- BD49K59G-TL
- BD49E59G-TR
- BD4924G-TR
- BD4924FVE-TR
- BD49K59G-TR
- RP130Q161B
- BD49E59G-TR
- BD49E59G-TR
- BD4924G-TL

