N 溝道，PowerTrench? MOSFET，80V，211A，3.3mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 Power Trench?工藝生產(chǎn)，這一先進(jìn)工藝是專(zhuān)為最大限度地降低通態(tài)電阻并保持卓越開(kāi)關(guān)性能而定制的。 ?RDS(on) = 2.85mΩ（典型值）@ VGS = 10V, ID = 50A\n?低 FOM RDS(on)*QG\n?低反向恢復(fù)電荷，Qrr\n?反向恢復(fù)軟體二極管\n?使能高效同步整流\n?快速開(kāi)關(guān)速度\n?100% 經(jīng)過(guò) UIL 測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel MOSFET

文件：1.87092 Mbytes 頁(yè)數(shù)：7 Pages

KERSEMI

N-Channel PowerTrench? MOSFET 75V, 235A, 3.2m廓

文件：552.79 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=120A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：316.78 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=235A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.82 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電