N 溝道，Power Trench? MOSFET，60V，129A，3.4mΩ

此N溝道MOSFET使用同步或傳統(tǒng)的開關(guān)PWM控制器，專為提高DC/DC轉(zhuǎn)換器的整體效率并最大限度降低其開關(guān)節(jié)點(diǎn)振鈴噪聲而設(shè)計。 它為實(shí)現(xiàn)低柵極電荷、低RDS(on)、高速開關(guān)和體二極管反向恢復(fù)性能而優(yōu)化。 ? Max rDS(on) = 3.4 m? at VGS = 10 V, ID = 20 A\n? Max rDS(on) = 4.1 m? at VGS = 8 V, ID = 18.5 A\n? Advanced package and silicon combination for low rDS(on) and high efficiency\n? Next generation enhanced body diode technology, engineered for soft recovery\n? MSL1 robust package design\n? 100% ;

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 60 V, 50 A, 3.4 m廓

文件：274.56 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrench? MOSFET 60 V, 18 A, 4.5 m廓

文件：262.29 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

CMOS 8-bit Single Chip Microcomputer

Description The CXP86540/86548/86560 are the CMOS 8-bit microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time-base timer, on-screen display function, I2C bus interface, PWM output, remote control reception circuit, HSYNC counter, watchdog timer, 32kH

文件：354.63 Kbytes 頁數(shù)：24 Pages

SONYSony Corporation

索尼

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 60V, ID= 50A RDS(ON)

文件：1.09091 Mbytes 頁數(shù)：4 Pages

BYCHIP

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：353.96 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電