N 溝道，PowerTrench? MOSFET，60V，18A，4.5mΩ

該N溝道MOSFET專為使用同步或傳統(tǒng)開關(guān)PWM控制器來改進(jìn)總體效率和在最大程度上減少DC/DC轉(zhuǎn)換器的開關(guān)結(jié)點振鈴而設(shè)計。已經(jīng)針對低柵極電荷、低rDS(on)、快速開關(guān)速度和軟體二極管反向恢復(fù)性能進(jìn)行了優(yōu)化。 ?VGS = 10V，ID = 18A時，最大rDS(on) = 4.5mΩ\n?VGS = 8 V，ID = 16.5 A時，最大rDS(on) = 5.4mΩ\n?高性能溝道技術(shù)可實現(xiàn)極低的rDS(on)\n?高功率和高電流處理能力，采用廣泛使用的表面貼裝封裝\n?100%經(jīng)過UIL測試\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 60 V, 18 A, 4.5 m廓

文件：262.29 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

CMOS 8-bit Single Chip Microcomputer

Description The CXP86540/86548/86560 are the CMOS 8-bit microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time-base timer, on-screen display function, I2C bus interface, PWM output, remote control reception circuit, HSYNC counter, watchdog timer, 32kH

文件：354.63 Kbytes 頁數(shù)：24 Pages

SONYSony Corporation

索尼

N-Channel PowerTrench? MOSFET 60 V, 50 A, 4.1 m廓

文件：247.22 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：353.96 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電