DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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N-Channel Dual CoolTM PowerTrench? MOSFET 60 V, 40 A, 6.3 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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N 溝道，雙 CoolTM 33 PowerTrench? MOSFET，60V，40A，6.3mΩ

此 N 溝道 MOSFET 采用飛兆半導(dǎo)體先進(jìn)的 PowerTrench?工藝生產(chǎn)。先進(jìn)的硅技術(shù)和 Dual Cool? 封裝技術(shù)完美融合，可在提供最小 rDS(on)的同時通過極低的結(jié)至環(huán)境熱阻保持卓越的開關(guān)性能。 ?Dual Cool? 頂側(cè)冷卻PQFN封裝\n?最大值 rDS(on) = 6.3 mΩ（VGS = 10 V, ID = 17 A 時）\n?最大值 rDS(on) = 8.7 mΩ（VGS = 8 V, ID = 14.5 A 時）\n?通態(tài)電阻 rDS(on)極低的高性能技術(shù)\n?符合 RoHS 標(biāo)準(zhǔn);

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N-Channel Power Trench? MOSFET 60 V, 22 A, 7.9 m廓

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N-Channel PowerTrench? MOSFET 60 V, 42 A, 7.4 m廓

文件：258.95 Kbytes 頁數(shù)：7 Pages

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N-Channel PowerTrench? MOSFET 60 V, 22 A, 8.2 m廓

文件：269.94 Kbytes 頁數(shù)：7 Pages

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