N-Channel MOSFET 500V, 4A, 1.4廓

Description UniFETTM MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitabl

文件：503.18 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.05 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

原裝正品現(xiàn)貨價(jià)格優(yōu)惠可開發(fā)票

文件：515.596 Kbytes 頁數(shù)：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

PDF上傳者：深圳市粵駿騰電子科技有限公司

功率 MOSFET，N 溝道，UniFETTM，500 V，4 A，1.4 Ω，DPAK

UniFETTM MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強(qiáng)度。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及照明設(shè)備用鎮(zhèn)流器。 ?RDS(on) = 1.15? （典型值）@ VGS = 10V, ID = 2A\n?低柵極電荷（典型值 11nC）\n?低 Crss（典型值 5pF） \n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.55Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：297.83 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET, FRFET 500V, 3.5A, 1.55廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：641.93 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET, FRFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：758.53 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET, FRFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：758.53 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET 500V, 4A, 1.5?

Description UniFET? II MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

文件：519.9 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET 500V, 3.7A, 1.75廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：304.59 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體