DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET 500V, 3.7A, 1.75廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：304.59 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET 500V, 4A, 1.5?

Description UniFET? II MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

文件：519.9 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel MOSFET, FRFET 500V, 3A, 2.0廓

Description UniFETTM MOSFET is Fairchild Semiconductor?s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. Features ? RDS(on) = 1

文件：641.19 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.0Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.06 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，UniFETTM II，500 V，4 A，1.5 Ω，DPAK

UniFETTM II MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于先進(jìn)平面條形和 DMOS 技術(shù)。 該先進(jìn) MOSFET 系列在平面 MOSFET 產(chǎn)品中具有最小的通態(tài)電阻，還可提供卓越的開關(guān)性能和更高的雪崩能量強(qiáng)度。 此外，內(nèi)部的柵源 ESD 二極管使 UniFET II MOSFET 產(chǎn)品可承受超過 2kV 的 HBM 沖擊應(yīng)力。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及燈用電子鎮(zhèn)流器。 ?RDS(on) = 1.38? （典型值）@ VGS = 10V, ID = 2A\n?低柵極電荷（典型值 9nC） \n?低 Crss（典型值 4pF） \n?100% 經(jīng)過雪崩擊穿測試\n?提高了 dv/dt 處理能力\n?改進(jìn)了 ESD 防護(hù)能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

功率 MOSFET，N 溝道，UniFETTM，F(xiàn)RFET?，500 V，3.7 A，1.75 Ω，DPAK

UniFETTM II MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于先進(jìn)平面條形和 DMOS 技術(shù)。 該先進(jìn) MOSFET 系列在平面 MOSFET 產(chǎn)品中具有最小的通態(tài)電阻，還可提供卓越的開關(guān)性能和更高的雪崩能量強(qiáng)度。 此外，內(nèi)部的柵源 ESD 二極管使 UniFET II MOSFET 產(chǎn)品可承受超過 2kV 的 HBM 沖擊應(yīng)力。 UniFET II FRFET? MOSFET體二極管的反向恢復(fù)性能通過壽命控制方式得到加強(qiáng)。 其 trr 小于 100nsec 且反向 dv/dt 抗擾度為 15V/nsec，而一般的平面 MOSFET 產(chǎn)品分別為 200nsec 以上和 ?RDS(on) = 1.47? （典型值）@ VGS = 10V, ID = 1.85A\n?低柵極電荷（典型值 9nC） \n?低 Crss（典型值 4pF） \n?100% 經(jīng)過雪崩擊穿測試\n?提高了 dv/dt 處理能力\n?改進(jìn)了 ESD 防護(hù)能力\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個(gè) 描述：MOSFET N-CH 500V 3.5A DPAK

ONSEMI

安森美半導(dǎo)體