P-Channel 2.5V Specified PowerTrench??OSFET

P-Channel 2.5V Specified PowerTrench? MOSFET

文件：269.68 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

文件：102.58 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：420；Package：SOT-26；20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

文件：102.58 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 2.5V Specified PowerTrench??OSFET

P-Channel 2.5V Specified PowerTrench? MOSFET

文件：269.68 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel PowerTrench? MOSFET -20V, -4A, 100m廓

Features ■ Typ rDS(on) = 52.5m? at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3m? at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

文件：263.33 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

FDC642P P-Channel 2.5V specified PowerTrench MOSFET

Features ■ Typ rDS(on) = 52.5m? at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3m? at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

文件：132.99 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fdc642p/marking.html">FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features ? Typ RDS(on) = 52.5 m at VGS = ?4.5 V, ID = ?4 A ? Typ RDS(on) = 75.3 m at VGS = ?2.5 V, ID = ?3.2 A ? Fast Switching Speed ? Low Gate Charge (6.9 nC Typical) ? High Performance Trench Technology for Extremely Low RDS(on) ? SUPERSOT?6 Package: Small Footprint (72 Smaller than S

文件：1.36533 Mbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fdc642p/marking.html">FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features ? Typ RDS(on) = 52.5 m at VGS = ?4.5 V, ID = ?4 A ? Typ RDS(on) = 75.3 m at VGS = ?2.5 V, ID = ?3.2 A ? Fast Switching Speed ? Low Gate Charge (6.9 nC Typical) ? High Performance Trench Technology for Extremely Low RDS(on) ? SUPERSOT?6 Package: Small Footprint (72 Smaller than S

文件：1.36533 Mbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

N- and P-Channel V (D-S) MOSFET

文件：1.13147 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

N 和 P 溝道，PowerTrench? MOSFET，20V

這些N和P溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 這些器件經(jīng)過專門設(shè)計(jì)，能在極小的空間內(nèi)實(shí)現(xiàn)優(yōu)異的功率耗散，非常適合那些不宜采用更大更昂貴的SO-8和TSSOP-8封裝的應(yīng)用。 ?Q1 3.0 A，20V\n?RDS(on) = 70 mΩ@ VGS = 4.5 V\n?RDS(on) = 95 mΩ @ VGS = 2.5 V\n?Q2 –2.2 A，20V。\n?RDS(on) = 125 mΩ@ VGS = -4.5 V\n?RDS(on) = 190 mΩ @ VGS = 2.5 V\n?低柵極電荷 \n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?SuperSOT –6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8小72%）；薄型（1mm厚）。;

ONSEMI

安森美半導(dǎo)體