20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

文件：102.58 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

20V N & P-Channel PowerTrench MOSFETs

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/420/marking.html">420；Package：SOT-26；20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

文件：102.58 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N- and P-Channel V (D-S) MOSFET

文件：1.13147 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

N 和 P 溝道，PowerTrench? MOSFET，20V

這些N和P溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 這些器件經(jīng)過專門設(shè)計，能在極小的空間內(nèi)實現(xiàn)優(yōu)異的功率耗散，非常適合那些不宜采用更大更昂貴的SO-8和TSSOP-8封裝的應(yīng)用。 ?Q1 3.0 A，20V\n?RDS(on) = 70 mΩ@ VGS = 4.5 V\n?RDS(on) = 95 mΩ @ VGS = 2.5 V\n?Q2 –2.2 A，20V。\n?RDS(on) = 125 mΩ@ VGS = -4.5 V\n?RDS(on) = 190 mΩ @ VGS = 2.5 V\n?低柵極電荷 \n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?SuperSOT –6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8小72%）；薄型（1mm厚）。;

ONSEMI

安森美半導(dǎo)體