P-Channel 2.5V Specified PowerTrench??OSFET

P-Channel 2.5V Specified PowerTrench? MOSFET

文件：269.68 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features ? Typ RDS(on) = 52.5 m at VGS = ?4.5 V, ID = ?4 A ? Typ RDS(on) = 75.3 m at VGS = ?2.5 V, ID = ?3.2 A ? Fast Switching Speed ? Low Gate Charge (6.9 nC Typical) ? High Performance Trench Technology for Extremely Low RDS(on) ? SUPERSOT?6 Package: Small Footprint (72 Smaller than S

文件：1.36533 Mbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features ? Typ RDS(on) = 52.5 m at VGS = ?4.5 V, ID = ?4 A ? Typ RDS(on) = 75.3 m at VGS = ?2.5 V, ID = ?3.2 A ? Fast Switching Speed ? Low Gate Charge (6.9 nC Typical) ? High Performance Trench Technology for Extremely Low RDS(on) ? SUPERSOT?6 Package: Small Footprint (72 Smaller than S

文件：1.36533 Mbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

P-Channel PowerTrench? MOSFET -20V, -4A, 100m廓

Features ■ Typ rDS(on) = 52.5m? at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3m? at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

文件：263.33 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

FDC642P P-Channel 2.5V specified PowerTrench MOSFET

Features ■ Typ rDS(on) = 52.5m? at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3m? at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

文件：132.99 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

P 溝道，PowerTrench? MOSFET，2.5V 指定，-20 V，-4.0 A，65mΩ

此N溝道2.5V額定MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大程度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 這些器件經(jīng)過專門設(shè)計(jì)，能以極小的尺寸提供出色的功耗，適合那些不宜采用更大封裝的應(yīng)用。 ?VGS = -4.5V，ID = -4.0A時(shí)，最大rDS(on) = 65mΩ\n?VGS = -2.5V，ID = -3.2A時(shí)，最大rDS(on) = 100mΩ\n?快速開關(guān)速度。\n?低柵極電荷（典型值11nC）。\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的rDS(ON)。\n?SuperSOT?-6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8封裝小72%）；薄型（1mm厚）\n?終端無引線且符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

P 溝道，PowerTrench? MOSFET，-20V，-4A，100mΩ

P-Channel PowerTrench? MOSFET, -20V, -4A, 100mΩ ?典型 rDS(on) = 52.5 m? （VGS = –4.5 V、ID = –4A）\n?典型 rDS(on) = 75.3 m? （VGS = –2.5 V、ID = –3.2 A）\n?快速開關(guān)速度\n?低柵極電荷（6.9nC典型值）\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的rDS(on)\n?SuperSOTT–封裝：小尺寸（比標(biāo)準(zhǔn) SO-8 小 72%）；超?。? mm 厚）。\n?符合 RoHS 標(biāo)準(zhǔn)\n?符合 AEC Q101;

ONSEMI

安森美半導(dǎo)體