N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 80 A, 30 V. RDS(ON) = 0.0035 ? @ VGS = 10 V RDS(ON) = 0.0045 ? @ VGS = 4.5 V

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無錫固電

30V N溝道邏輯電平PowerTrench? MOSFET

此N溝道邏輯電平MOSFET已經(jīng)過專門設(shè)計(jì)，采用同步或常規(guī)的開關(guān)PWM控制器提高DC/DC轉(zhuǎn)換器的整體效率。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 因此，這是一款更易于驅(qū)動且更安全（在高頻段也是如此）的MOSFET，可實(shí)現(xiàn)具有更高總效率的DC/DC電源設(shè)計(jì)。 ? ? 80A, 30V\n? RDS(ON) = 0.0035 Ω@ VGS =10 V\n? RDS(ON) = 0.0045 Ω @ VGS = 4.5 V? 在高溫下指定的臨界DC電氣參數(shù)? 耐用的內(nèi)部源極-漏極二極管使得無需使用外部齊納二極管瞬態(tài)抑制器。? 高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)? 175°C最大結(jié)溫額定值。\n? High performance trench technology for extremelylow RDS(ON)\n? 175°C maximum junction temperature rating;

ONSEMI

安森美半導(dǎo)體

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features ? Metal of silicon rectifier, majonty carrier conducton ? Guard ring for transient protection ? Low power loss high efficiency ? High surge capacity, High current capability

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MCC

LED BARGRAPH DISPLAY

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FORYARD

復(fù)洋

NPN 300, 350, 400V 8 AMP SWITCHING

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NJSEMINew Jersey Semi-Conductor Products, Inc.

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