雙 N 溝道，Power Trench? MOSFET，40V，12A，10mΩ

該器件包括兩個(gè)專用N溝道MOSFET，采用雙Power33 (3mm x 3mm MLP)封裝。 封裝增強(qiáng)用于出色的熱性能。 ?VGS = 10 V，ID = 12 A時(shí)，最大rDS(on) = 10mΩ\n?VGS = 4.5 V，ID = 10 A時(shí)，最大rDS(on) = 14mΩ\n?VGS = 3.2 V，ID = 4 A時(shí)，最大rDS(on) = 28mΩ\n?終端無引線且符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Dual N-Channel Power Trench? MOSFET 40 V, 12 A, 10 m廓

文件：341.18 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 80 A, 30 V. RDS(ON) = 0.0035 ? @ VGS = 10 V RDS(ON) = 0.0045 ? @ VGS = 4.5 V

文件：358.16 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.97 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features ? Metal of silicon rectifier, majonty carrier conducton ? Guard ring for transient protection ? Low power loss high efficiency ? High surge capacity, High current capability

文件：87.28 Kbytes 頁數(shù)：3 Pages

MCC