600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：332.86 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

600V N-Channel MOSFET

文件：1.00856 Mbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，SUPERFET?，Easy Drive，600 V，20 A，190 mΩ，D2PAK

SuperFET?MOSFET 是飛兆半導(dǎo)體第一代利用電荷平衡技術(shù)實現(xiàn)出色低導(dǎo)通電阻和更低柵極電荷性能的高壓超級結(jié)（SJ）MOSFET 系列產(chǎn)品。這項技術(shù)專用于最小化傳導(dǎo)損耗并提供卓越的開關(guān)性能、dv/dt 額定值和更高雪崩能量。因此，SuperFET MOSFET 非常適合開關(guān)電源應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX 電源及工業(yè)電源應(yīng)用。 ?650V @TJ = 150°C\n?典型值RDS(on) = 150mΩ\n?超低柵極電荷（典型值Qg = 75nC )\n?低有效輸出電容（典型值Coss.eff = 165pF )\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel MOSFET

Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superio

文件：363.31 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-CHANNEL FRFET

Description SuperFETTM is, Farichild’s proprietary, new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,

文件：862 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：332.87 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-CHANNEL FRFET

Description SuperFETTM is, Farichild’s proprietary, new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,

文件：862 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體