600V N-CHANNEL FRFET

Description SuperFETTM is, Farichild’s proprietary, new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,

文件：862 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：332.87 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁(yè)數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-CHANNEL FRFET

Description SuperFETTM is, Farichild’s proprietary, new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,

文件：862 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channe MOSFET 600V, 20A, 190m廓

文件：341.81 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，SUPERFET?，F(xiàn)RFET?，600 V，20 A，190 m?，D2PAK

SuperFET?MOSFET 是飛兆半導(dǎo)體第一代利用電荷平衡技術(shù)實(shí)現(xiàn)出色低導(dǎo)通電阻和更低柵極電荷性能的高壓超級(jí)結(jié)（SJ）MOSFET 系列產(chǎn)品。這項(xiàng)技術(shù)專(zhuān)用于最小化傳導(dǎo)損耗并提供卓越的開(kāi)關(guān)性能、dv/dt 額定值和更高雪崩能量。因此，SuperFET MOSFET產(chǎn)品非常適合開(kāi)關(guān)電源應(yīng)用，如功率因數(shù)校正(PFC)、服務(wù)器/電信電源、平板電視電源、ATX電源及工業(yè)電源應(yīng)用。SuperFET FRFET?MOSFET 優(yōu)化體二極管的反向恢復(fù)性能可去除額外元件并提高系統(tǒng)可靠性。 ?650V @TJ = 150°C\n?典型值RDS(on) = 150mΩ\n?超低柵極電荷（典型值Qg = 75nC )\n?低有效輸出電容（典型值Coss.eff = 165pF )\n?100% 經(jīng)過(guò)雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N 溝道 MOSFET 600V，20A，190mΩ，

SuperFETTM作為 Fairchild 高壓 MOSFET 系列的新一代專(zhuān)利產(chǎn)品，采用先進(jìn)的電荷平衡機(jī)制，能夠顯著降低導(dǎo)通電阻并實(shí)現(xiàn)更低的柵極電荷性能。這項(xiàng)先進(jìn)的技術(shù)專(zhuān)用于最大限度地減少傳導(dǎo)損耗，提供卓越的開(kāi)關(guān)性能，以及承受極端高的 dv/dt 電壓變化率和更高的雪崩能量值。因此，SuperFET 非常適用于開(kāi)關(guān)模式運(yùn)行下的各種 AC/DC功率轉(zhuǎn)換，從而實(shí)現(xiàn)系統(tǒng)的微型化以及更高的效率 ?典型值 rDS(on) = 171 mΩ（VGS= 10 V、ID = 20 A）\n?典型Qg(tot)=78nC（VGS=10V、ID=20A）\n?UIS 能力\n?符合 RoHS 標(biāo)準(zhǔn)\n?符合 AEC Q101 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體