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首頁 >DS133>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
DS133	文件：2.24978 Mbytes Page：17 Pages	Extreme efficacy and best performance 文件：2.24978 Mbytes 頁數(shù)：17 Pages	LUMILEDS	LUMILEDS
DS1330AB	文件：191.48 Kbytes Page：11 Pages	256k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu 文件：191.48 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1330ABP-100	文件：191.48 Kbytes Page：11 Pages	256k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu 文件：191.48 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1330ABP-100-IND	文件：191.48 Kbytes Page：11 Pages	256k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu 文件：191.48 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1330ABP-70	文件：191.48 Kbytes Page：11 Pages	256k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu 文件：191.48 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1330ABP-70-IND	文件：191.48 Kbytes Page：11 Pages	256k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu 文件：191.48 Kbytes 頁數(shù)：11 Pages	DALLAS	DALLAS
DS1330BL-100	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁數(shù)：9 Pages	DALLAS	DALLAS
DS1330BL-100-IND	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁數(shù)：9 Pages	DALLAS	DALLAS
DS1330BL-70	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁數(shù)：9 Pages	DALLAS	DALLAS
DS1330BL-70-IND	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁數(shù)：9 Pages	DALLAS	DALLAS

技術參數(shù)

Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
Battery Monitor
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
PWRCP/34
Budgetary Price (See Notes)：
$10.83 @1k

供應商	型號	品牌	批號	封裝	庫存	備注	價格
中天科工半導體（深圳）有限公司	DS1337S+T&R	MAXIM/美信	20+	SOP8	32500	MAXIM全新原裝-可開原型號增稅票	詢價
深圳市寶芯創(chuàng)電子有限公司	DS1338Z-18+T&R	MAXIM/美信	16+	SOP8	26990	進口原盤原盒現(xiàn)貨/2500	詢價
深圳市鑫煒納電子有限公司	DS1337S+T&R	MAXIM	2022+		7600	原廠原裝,假一罰十	詢價
深圳市芯為科技有限公司	DS1339U-33/T&R	Rochester	25+	電聯(lián)咨詢	7800	公司現(xiàn)貨,提供拆樣技術支持	詢價
深圳市威雅利發(fā)展有限公司	DS1339U-33+TR	MAXIM	13+	MSOP8	2400	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
訊運(深圳/上海)電子有限公司	DS1338Z-3+	MAXIM(美信)	2021+	SOIC-8	499		詢價
深圳市柯爾基電子有限公司	DS1339U-3	DS	23+24	MSOP8	28950	專營原裝正品SMD二三極管,電源IC	詢價
深圳市正納電子有限公司	DS1338U-3+T&R	Maxim(美信)	23+	NA	20094	原裝正品可支持驗貨，歡迎咨詢	詢價
深圳市福安甌科技有限公司	DS1337S	DALLAS	25+	SOP8	2500		詢價
深圳市澳億芯電子科技有限公司	DS1339U-33+	MAXIM	24+	MSOP	5000	只有原裝	詢價

更多DS133供應商更新時間2026-1-18 14:14:00

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