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首頁(yè) >DS133>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
DS1330W	文件：107.99 Kbytes Page：11 Pages	3.3V 256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condi 文件：107.99 Kbytes 頁(yè)數(shù)：11 Pages	DALLAS	DALLAS
DS1330WP-150-IND	文件：107.99 Kbytes Page：11 Pages	3.3V 256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condi 文件：107.99 Kbytes 頁(yè)數(shù)：11 Pages	DALLAS	DALLAS
DS1330Y	文件：191.48 Kbytes Page：11 Pages	256k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256k NV SRAMs are 262,144-bit, fully static, NV SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu 文件：191.48 Kbytes 頁(yè)數(shù)：11 Pages	DALLAS	DALLAS
DS1330Y-100	文件：211 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：211 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1330Y-100	文件：228.66 Kbytes Page：12 Pages	4096k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件：228.66 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1330YL	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1330YL-100	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1330YL-100-IND	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1330YL-70	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS
DS1330YL-70-IND	文件：219.54 Kbytes Page：9 Pages	256K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1330 256K Nonvolatile SRAMs are 262,144–bit, fully static, nonvolatile SRAMs organized as 32,768 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit 文件：219.54 Kbytes 頁(yè)數(shù)：9 Pages	DALLAS	DALLAS

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技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
Battery Monitor
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
PWRCP/34
Budgetary Price (See Notes)：
$10.83 @1k

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市榮澤信電子科技有限公司	DS1339U-33+T&R	DALLAS	23+	SOIC	15000	全新進(jìn)口原裝現(xiàn)貨,價(jià)優(yōu)	詢價(jià)
深圳市鵬和科技有限公司	DS1339		24+	SOP	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市海天鴻電子科技有限公司	DS1339U-33	MAXIM	1701+	uSOP	7500	只做原裝進(jìn)口,假一罰十	詢價(jià)
深圳市芯為科技有限公司	DS1339U-33/T&R	Rochester	25+	電聯(lián)咨詢	7800	公司現(xiàn)貨,提供拆樣技術(shù)支持	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	DS1337S+T&R	MAXIM/美信	20+	SOP8	32500	MAXIM全新原裝-可開(kāi)原型號(hào)增稅票	詢價(jià)
深圳市寶芯創(chuàng)電子有限公司	DS1338Z-18+T&R	MAXIM/美信	16+	SOP8	26990	進(jìn)口原盤(pán)原盒現(xiàn)貨/2500	詢價(jià)
深圳市富利微電子科技有限公司	DS1339U-33+T&R	MAXIM/美信	24+	MSOP	30000	房間原裝現(xiàn)貨特價(jià)熱賣(mài),有單詳談	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	DS1339U-33+T&R	MAXIM/美信	23+	MSOP8	3000	一級(jí)代理原廠VIP渠道,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、	詢價(jià)
深圳市鑫煒納電子有限公司	DS1337S+T&R	MAXIM	2022+		7600	原廠原裝,假一罰十	詢價(jià)
深圳市福安甌科技有限公司	DS1337S	DALLAS	25+	SOP8	2500		詢價(jià)

更多DS133供應(yīng)商更新時(shí)間2025-8-28 16:26:00

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